Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor
US6256331A · kind A · utility
15Cited by
6References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1998 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Aug 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor laser device of the present invention includes a GaAs substrate and a multi-layer structure formed on the GaAs substrate. The multi-layer structure includes an active layer for emitting light. The active layer includes an InN.sub.x As.sub.y P.sub.1-x-y (where 0<x<1 and 0.ltoreq.y<1) layer that is lattice-matched with the GaAs substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.