Precursors for making low dielectric constant materials with improved thermal stability
US6258407A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1999 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Nov 15, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fluorinated chemical precursors, methods of manufacture, polymer thin filmswith low dielectric constants, and integrated circuits comprising primarily of sp.sup.2 C--F and some hyperconjugated sp.sup.3 C--F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.