Hui Wang
17Patents
10h-index
23Co-inventors
68Inventor score
Filing activity: Aug 11, 1997 → Dec 12, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6051321A | Low dielectric constant materials and method | Emerging Cross-Sectional Technologies | 132 | Expired |
| US6136680A | Methods to improve copper-fluorinated silica glass interconnects | Electricity | 84 | Expired |
| US5956609A | Method for reducing stress and improving step-coverage of tungsten interconnects and plugs | Electricity | 76 | Expired |
| US6086679A | Deposition systems and processes for transport polymerization and chemical vapor deposition | Performing Operations; Transporting | 75 | Expired |
| US6140456A | Chemicals and processes for making fluorinated poly(para-xylylenes) | Chemistry; Metallurgy | 31 | Expired |
| US6020458A | Precursors for making low dielectric constant materials with improved thermal stability | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6258407A | Precursors for making low dielectric constant materials with improved thermal stability | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6323297A | Low dielectric constant materials with improved thermal and mechanical properties | Chemistry; Metallurgy | 14 | Expired |
| US6407007B1 | Method to solve the delamination of a silicon nitride layer from an underlying spin on glass layer | Electricity | 14 | Expired |
| US6663973B1 | Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6281146A | Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity | Electricity | 7 | Expired |
| US7805674B2 | System for controlling the display size of a formula bar in a spreadsheet | Physics | 7 | Active |
| US6534616B2 | Precursors for making low dielectric constant materials with improved thermal stability | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6248002A | Obtaining the better defect performance of the fuse CMP process by adding slurry polish on more soft pad after slurry polish | Performing Operations; Transporting | 6 | Expired |
| US6586347B1 | Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits | Electricity | 5 | Expired |
| US6287172A | Method for improvement of tungsten chemical-mechanical polishing process | Performing Operations; Transporting | 5 | Expired |
| US9047805B2 | Driving method of pixels of display panel | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.