Method for forming a shallow trench isolation using HDP silicon oxynitride
US6258676A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1999 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Nov 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Method for forming a shallow trench isolation using HDP silicon oxynitride. A pad oxide layer is formed on a semiconductor substrate having an active area and an isolation area and a barc layer is formed over the pad oxide layer. The barc layer, the pad oxide layer, and the semiconductor substrate are patterned to form a trench having rounded corners in the isolation area. A liner oxide layer is formed over the semiconductor substrate, and a gap fill layer is formed on the liner oxide layer. An important feature of the invention is that the gap fill layer is composed of silicon oxynitride formed using a high density plasma chemical vapor deposition process. A portion of the gap fill layer over the active area can be removed using a reverse trench mask etch, and the gap fill layer is further planarized with a chemical mechanical polishing process using the liner oxide layer as chemical mechanical polishing stop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.