Cylindrical capacitor and method for fabricating same
US6258691A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 9, 1999 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Jul 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a cylindrical capacitor that exceeds photolithographic resolution. The capacitor is formed by partially etching the storage node opening, thereby reducing the distance between adjacent openings defined by the photolithographic process. The openings defined by the photolithographic process is enlarged by wet etching the sidewalls of the openings by at least the same thickness as that of a subsequently formed conductive layer for storage node formation. Contact plugs that are electrically connected to the bottom of the cylindrical storage nodes protrude from the top surface of an insulating layer in order to increase process margins and decrease contact resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.