Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity

US6258710A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Hazara S. Rathore · Stormville, US
• Hormazdyar M. Dalal · Lagrangeville, US
• Paul S. McLaughlin · Poughkeepsie, US
• Du Nguyen · Danbury, US
• Richard G. Smith · North Aurora, US
• Alexander J. Swinton · Hopewell Junction, US
• Richard A. Wachnik · Mount Kisco, US

Key dates

• Filing date: Dec 10, 1999
• Grant date: Jul 10, 2001
• Expiry date: Dec 10, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.