Method for forming a borderless contact
US6258712A · kind A · utility
17Cited by
4References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 1, 1999 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Feb 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of a self-alignment process to enhance the yield of borderless contact is described. The method provides a two-step, selective etching process, using the difference in the etching selectivities of the inter-metal dielectric layer and the barrier layer. The barrier layer is used as an etching stop layer, and a portion of the inter-metal dielectric layer is removed to form a contact window. The barrier layer and the inter-metal dielectric layer on the bottom of the contact window are removed, and then a borderless contact according to the invention is complete.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.