Inventor · Hsinchu, TW

Chien-Jung Wang

35Patents
7h-index
23Co-inventors
69Inventor score

Filing activity: Nov 30, 1998 → Jun 10, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6815971B2 Method and apparatus for stress testing integrated circuits using an adjustable AC hot carrier injection source Physics 60 Expired
US6617180B1 Test structure for detecting bridging of DRAM capacitors Electricity 53 Expired
US7485912B2 Flexible metal-oxide-metal capacitor design Electricity 48 Expired
US7893459B2 Seal ring structures with reduced moisture-induced reliability degradation Electricity 27 Active
US6258712A Method for forming a borderless contact Electricity 17 Expired
US7851793B2 Test structure with TDDB test pattern Electricity 8 Active
US6897475B2 Test structure and related methods for evaluating stress-induced voiding Physics 7 Expired
US7646207B2 Method for measuring a property of interconnections and structure for the same Electricity 6 Active
US6277742A Method of protecting tungsten plug from corroding Emerging Cross-Sectional Technologies 5 Expired
US7227266B2 Interconnect structure to reduce stress induced voiding effect Electricity 5 Expired
US6060786A Alignment-marker structure and method of forming the same in integrated circuit fabrication Electricity 5 Expired
US7504731B2 Interconnect structure to reduce stress induced voiding effect Electricity 5 Active
US8729705B2 Seal ring structures with reduced moisture-induced reliability degradation Electricity 3 Active
US7301239B2 Wiring structure to minimize stress induced void formation Electricity 3 Expired
US6245667A Method of forming via Electricity 3 Expired
US6258694A Fabrication method of a device isolation structure Electricity 2 Expired
US8379365B2 Metal oxide metal capacitor with slot vias Electricity 2 Active
US6396751B1 Semiconductor device comprising a test structure Physics 2 Expired
US8674508B2 Seal ring structures with reduced moisture-induced reliability degradation Electricity 2 Active
US8227923B2 Interconnect structure to reduce stress induced voiding effect Electricity 2 Active
US9502886B2 MiM capacitor Electricity 1 Active
US6934206B2 Test structure for detecting bridging of DRAM capacitors Electricity 1 Expired
US6171963A Method for forming a planar intermetal dielectric using a barrier layer Electricity 1 Expired
US10020239B2 Semiconductor structure and manufacturing method thereof Electricity 0 Active
US9425330B2 Metal oxide metal capacitor with slot vias Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.