Method of forming a patterned organic dielectric layer on a substrate
US6258732A · kind A · utility
9Cited by
9References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1999 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Feb 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An organic dielectric material is patterned on a substrate in a process utilizing a patterned resist which contains a metalloid or metallic element at the time of pattern transfer to the organic dielectric layer. The organic dielectric layer is preferably patterned using an oxygen etching process, most preferably oxygen reactive ion etching. The process advantageously avoids the need for a hard mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.