Qinghuang Lin
135Patents
15h-index
130Co-inventors
89Inventor score
Filing activity: Feb 25, 1998 → Oct 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8241992B2 | Method for air gap interconnect integration using photo-patternable low k material | Electricity | 401 | Active |
| US6087064A | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method | Emerging Cross-Sectional Technologies | 139 | Expired |
| US7041748B2 | Patternable low dielectric constant materials and their use in ULSI interconnection | Emerging Cross-Sectional Technologies | 67 | Expired |
| US6210856A | Resist composition and process of forming a patterned resist layer on a substrate | Physics | 59 | Expired |
| US7306853B2 | Patternable low dielectric constant materials and their use in ULSI interconnection | Emerging Cross-Sectional Technologies | 48 | Expired |
| US6340734B1 | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6187505A | Radiation sensitive silicon-containing resists | Physics | 25 | Expired |
| US9490202B2 | Self-aligned airgap interconnect structures | Electricity | 22 | Active |
| US6344305B1 | Radiation sensitive silicon-containing resists | Physics | 21 | Expired |
| US7709370B2 | Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures | Emerging Cross-Sectional Technologies | 20 | Active |
| US7479306B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | Emerging Cross-Sectional Technologies | 18 | Active |
| US8617941B2 | High-speed graphene transistor and method of fabrication by patternable hard mask materials | Electricity | 18 | Active |
| US8900988B2 | Method for forming self-aligned airgap interconnect structures | Electricity | 17 | Active |
| US6103447A | Approach to formulating irradiation sensitive positive resists | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7919225B2 | Photopatternable dielectric materials for BEOL applications and methods for use | Emerging Cross-Sectional Technologies | 15 | Active |
| US9647200B1 | Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material | Electricity | 14 | Active |
| US7361444B1 | Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof | Emerging Cross-Sectional Technologies | 12 | Expired |
| US9472450B2 | Graphene cap for copper interconnect structures | Electricity | 12 | Active |
| US8642252B2 | Methods for fabrication of an air gap-containing interconnect structure | Electricity | 11 | Active |
| US9054160B2 | Interconnect structure and method for fabricating on-chip interconnect structures by image reversal | Electricity | 10 | Active |
| US8659115B2 | Airgap-containing interconnect structure with improved patternable low-K material and method of fabricating | Electricity | 10 | Active |
| US8519540B2 | Self-aligned dual damascene BEOL structures with patternable low- K material and methods of forming same | Electricity | 10 | Active |
| US6303263A | Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6258732A | Method of forming a patterned organic dielectric layer on a substrate | Electricity | 9 | Expired |
| US8029971B2 | Photopatternable dielectric materials for BEOL applications and methods for use | Emerging Cross-Sectional Technologies | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.