Metal-insulator-metal capacitor for copper damascene process and method of forming the same

US6259128A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Eric Adler · Jericho, US
• Henry W. Trombley · Middlebury, US

Key dates

• Filing date: Apr 23, 1999
• Grant date: Jul 10, 2001
• Expiry date: Apr 23, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

A capacitor structure formed on a semiconductor substrate may include a first interconnect wiring (such as copper damascene) and a first conductive barrier layer in contact with the first interconnect wiring. A first capacitor plate, a capacitor dielectric structure and a second capacitor plate may also be included over the first conductive barrier layer. A second conductive barrier layer may be formed on the second capacitor plate and a second planar insulating structure may be formed over the second capacitor plate. Finally, a second interconnect wiring may be embedded within a second planar insulator structure.