Eric Adler
25Patents
11h-index
50Co-inventors
78Inventor score
Filing activity: May 15, 1995 → Dec 16, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6259128A | Metal-insulator-metal capacitor for copper damascene process and method of forming the same | Electricity | 69 | Expired |
| US6531375B1 | Method of forming a body contact using BOX modification | Electricity | 42 | Expired |
| US6344964B1 | Capacitor having sidewall spacer protecting the dielectric layer | Emerging Cross-Sectional Technologies | 34 | Expired |
| US6624031B2 | Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure | Electricity | 29 | Expired |
| US5670812A | Field effect transistor having contact layer of transistor gate electrode material | Emerging Cross-Sectional Technologies | 27 | Expired |
| US8736503B2 | Compact Rotman lens using metamaterials | Electricity | 26 | Active |
| US6476483B1 | Method and apparatus for cooling a silicon on insulator device | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6452779B1 | One-mask metal-insulator-metal capacitor and method for forming same | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5744384A | Semiconductor structures which incorporate thin film transistors | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5757050A | Field effect transistor having contact layer of transistor gate electrode material | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5691549A | Sidewall strap | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6667539B2 | Method to increase the tuning voltage range of MOS varactors | Electricity | 6 | Expired |
| US6750114B2 | One-mask metal-insulator-metal capacitor and method for forming same | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6433372B1 | Dense multi-gated device design | Electricity | 5 | Expired |
| US5521118A | Sidewall strap | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7132325B2 | Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure | Electricity | 4 | Expired |
| US7302376B2 | Device modeling for proximity effects | Physics | 4 | Expired |
| US6683345B1 | Semiconductor device and method for making the device having an electrically modulated conduction channel | Electricity | 3 | Expired |
| US6993814B2 | Method of fabricating a capacitor having sidewall spacer protecting the dielectric layer | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6913965B2 | Non-Continuous encapsulation layer for MIM capacitor | Electricity | 2 | Expired |
| US6770907B2 | Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure | Electricity | 2 | Expired |
| US12089385B2 | Highly-conformal, pliable thin electromagnetic skin | Performing Operations; Transporting | 1 | Active |
| US7326987B2 | Non-continuous encapsulation layer for MIM capacitor | Electricity | 1 | Expired |
| US11806367B2 | Methods of treating lysosomal disorders | Chemistry; Metallurgy | 0 | Active |
| US11065347B2 | Methods for the treatment of Danon disease and other disorders of autophagy | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.