Technique for growing silicon carbide monocrystals
US6261363A · kind A · utility
Inventors
Key dates
| Filing date | Jul 20, 1999 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Jul 20, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sublimation technique of growing silicon carbide single crystals, comprising a parallel arrangement, opposite each other, of the evaporating surface of a silicon carbide source (1) and the growing surface of at least one seed crystal (2) of a specified politype, to define a growth zone (4), and generation of a reduced pressure and an operating temperature field with an axial gradient in the direction from the seed crystal (2) towards the source (1), providing evaporation of silicon carbide of the source (1) and vapour-phase crystallization of silicon carbide on the growing surface of the seed crystal (2). The growth zone (4) is here sealed before the operating temperatures are reached therein, and the process is run with a solid solution of tantalum and silicon carbides in tantalum and their chemical compounds present in the growth zone (4). The material of the source (1) employed for implementing the sublimation technique of growing silicon carbide crystals is silison carbide ceramics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.