Mark Spiridonovich Ramm
10Patents
5h-index
13Co-inventors
59Inventor score
Filing activity: Jul 20, 1999 → Jul 10, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6534026B2 | Low defect density silicon carbide | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6428621B1 | Method for growing low defect density silicon carbide | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6261363A | Technique for growing silicon carbide monocrystals | Chemistry; Metallurgy | 13 | Expired |
| US6508880B2 | Apparatus for growing low defect density silicon carbide | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6562130B2 | Low defect axially grown single crystal silicon carbide | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6863728B2 | Apparatus for growing low defect density silicon carbide | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6562131B2 | Method for growing single crystal silicon carbide | Chemistry; Metallurgy | 4 | Expired |
| US6547877B2 | Tantalum crucible fabrication and treatment | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6537371B2 | Niobium crucible fabrication and treatment | Emerging Cross-Sectional Technologies | 2 | Expired |
| US10793972B1 | High quality silicon carbide crystals and method of making the same | Chemistry; Metallurgy | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.