Post-ashing treating liquid compositions and a process for treatment therewith
US6261745A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1999 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Jun 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.