Method for forming a magnetic layer of magnetic random access memory
US6261893A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2000 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Oct 12, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a method for forming a magnetic layer of magnetic random access memory. In short, the method comprises following steps: providing a substrate; forming metal structures on substrate; forming a stop layer on substrate and mostly conformally covers metal structures; forming a buffer layer which mostly conformally covers stop layer; forming a dielectric layer on buffer layer where thickness of dielectric layer is larger than height of metal structures; planarizing the surface of said dielectric layer; and forming a magnetic layer on dielectric layer. Moreover, some essential key-points of the method are dielectric layer is more sensitive to said stop layer than buffer layer and gap fill ability of dielectric layer is better than gap fill ability of buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.