Method of forming shallow trench isolation structure
US6261921A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1999 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Sep 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a shallow trench isolation structure is described. A mask layer and a photoresist layer with an opening are formed on a substrate in sequence. The photoresist layer serves as an etching mask, and then a portion of the mask layer and a portion of the substrate are etched to form a trench in the substrate. A portion of the photoresist layer is removed, and the opening is in-situ widened. Then, a portion of the mask layer exposed by the widened opening is removed. In addition, a top corner of the trench is rounded after removing the portion of the mask layer. Finally, the trench is filled with an insulation material to form a shallow trench isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.