Remote plasma nitridation to allow selectively etching of oxide
US6261973A · kind A · utility
21Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1998 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Dec 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed of nitridating an oxide containing surface the disclosed method includes the steps of, obtaining a substrate, growing an oxide layer on the substrate, exposing the surface of the oxide layer to a nitrogen ion containing plasma at, e.g., room temperature, wherein the nitrogen ions form a nitrided layer on the oxide layer resistant to chemistries used to etch oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.