Inventor · McKinney, TX, US

Sunil Hattangady

21Patents
14h-index
24Co-inventors
77Inventor score

Filing activity: Dec 3, 1990 → Feb 19, 2004

Most-cited inventions

PatentTitleAreaCited byStatus
US6136654A Method of forming thin silicon nitride or silicon oxynitride gate dielectrics Electricity 127 Expired
US6110842A Method of forming multiple gate oxide thicknesses using high density plasma nitridation Emerging Cross-Sectional Technologies 85 Expired
US6610614B2 Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates Electricity 51 Expired
US6251761A Process for polycrystalline silicon gates and high-K dielectric compatibility Electricity 49 Expired
US5989962A Semiconductor device having dual gate and method of formation Electricity 38 Expired
US6632747B2 Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile Electricity 38 Expired
US6331492A Nitridation for split gate multiple voltage devices Emerging Cross-Sectional Technologies 37 Expired
US5970345A Method of forming an integrated circuit having both low voltage and high voltage MOS transistors Emerging Cross-Sectional Technologies 33 Expired
US6399445B1 Fabrication technique for controlled incorporation of nitrogen in gate dielectric Electricity 32 Expired
US6140024A Remote plasma nitridation for contact etch stop Electricity 30 Expired
US6268296A Low temperature process for multiple voltage devices Electricity 30 Expired
US6323114A Stacked/composite gate dielectric which incorporates nitrogen at an interface Electricity 28 Expired
US6261973A Remote plasma nitridation to allow selectively etching of oxide Electricity 21 Expired
US6716695B1 Semiconductor with a nitrided silicon gate oxide and method Electricity 17 Expired
US6277681A Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics Electricity 11 Expired
US6956267B2 Semiconductor with a nitrided silicon gate oxide and method Electricity 9 Expired
US5168330A Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer Electricity 8 Expired
US6780719B2 Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures Electricity 4 Expired
US6420729B1 Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics Electricity 2 Expired
US6352941B1 Controllable oxidation technique for high quality ultrathin gate oxide formation Electricity 2 Expired
US6423648B1 Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent Electricity 1 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.