Process for forming semiconductor device with thick and thin films
US6261978A · kind A · utility
17Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1999 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Feb 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
A first dielectric layer (22) is formed over a semiconductor device substrate. A resist layer (32) is then patterned to expose portions of the first dielectric layer (22). Portions of the first dielectric layer (22) are removed to expose portions of the semiconductor device substrate (42). The resist layer (32) is then removed. The semiconductor device substrate is cleaned without using a fluorine-containing solution and a second dielectric layer (62) is formed overlying the semiconductor device substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.