Metal electrical contact for high current density applications in LED and laser devices
US6262440A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1998 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Jun 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting semiconductor device such as a laser or LED includes a light-emitting region interposed between two GaN contact layers of different conductivity types. A metal electrical contact is provided directly on one of the contact layers and is formed of an annealed, at least partly alloyed metal layer including hafnium and gold. The metal layer may also include platinum, or platinum and titanium. Light-emitting semiconductor devices such as light-emitting diodes and lasers having such annealed, at least partly alloyed metal layer are particularly suitable for high current-density applications which result in higher operating temperatures, such they are capable of operating at higher temperatures without shorting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.