Patent · US Expired

SiC sidewall process

US6262445A · kind A · utility

40Cited by
5References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 25, 1999
Grant dateJul 17, 2001
Priority date—
Expiry dateMar 25, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S257/90
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The use of silicon carbide to form sidewall spacers allows the use of a lower temperature deposition step, and provides greater etch selectivity with respect to oxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.