Method of generating mask data in fabricating semiconductor devices
US6265114A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Sep 16, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of generating data for a mask in fabricating a semiconductor device is disclosed in the present application. The method includes the steps of determining original mask data for a mask hole pattern on the mask, the hole pattern being formed in at least three rows, defining the mask hole pattern as first, second, and third hole patterns, wherein the first, second, and third hole patterns have first, second, and third distances between holes in first, second, and third rows, respectively, determining a degree of distortion in each row, and calculating adjusted mask data by calibrating a size of the second and third hole patterns in accordance with the distance and the degree of distortion in each row for generating a photoresist hole pattern to be the same as the mask hole pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.