Method for making a complementary metal gate electrode technology
US6265258A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2000 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | May 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
A method for making a circuit device that includes a first transistor having a first metal gate electrode overlying a first gate dielectric on a first area of a semiconductor substrate. The first gate electrode has a work function corresponding to the work function of one of P-type silicon and N-type silicon. The circuit device also includes a second transistor coupled to the first transistor. The second transistor has a second metal gate electrode over a second gate dielectric on a second area of the semiconductor substrate. The second gate metal gate electrode has a work function corresponding to the work function of the other one of P-type silicon and N-type silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.