Method for producing semiconductor layer for a semiconductor laser device
US6265287A · kind A · utility
8Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1998 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Oct 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.