Method of forming metal interconnect structures and metal via structures using photolithographic and electroplating or electro-less plating procedures
US6265301A · kind A · utility
20Cited by
37References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | May 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming metal interconnect structures, and metal via structures, using electroplating, or electroless plating procedures, has been developed. The process features the use of disposable conductive layers, used as seed layers for the plating procedures. After formation of the desired metal structures, on the portion of seed layer, exposed in an opening in the photoresist shape, the photoresist shape, and the underlying portion of the disposable conductive layer, are removed, resulting in the desired metal structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.