Forming attached features on a semiconductor substrate
US6265757A · kind A · utility
25Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Nov 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/005
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for creating attached features while controlling the depth profile between the features is presented. First the features are formed with a separating barrier between the features. The separating barrier is then etched in a second step with an orientation dependent etchant to attach the two feature. This method can be used to create attached features of relative similar sizes or attached features of disparate sizes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.