Partially non-volatile dynamic random access memory formed by a plurality of single transistor cells used as DRAM cells and EPROM cells
US6266272A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Jul 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Partially Non-Volatile Dynamic Random Access Memory (PNDRAM) uses a DRAM array formed by a plurality of single transistor (1T) cells or two transistor (2T) cells. The cells are electrically programmable as a non-volatile memory. This results in a single chip design featuring both, a dynamic random access memory (DRAM) and an electrically programmable-read-only-memory (EPROM). The DRAM and the EPROM integrated in the PNDRAM can be easily reconfigured at any time, whether during manufacturing or in the field. The PNDRAM has multiple applications such as combining a main memory with ID, BIOS, or operating system information in a single chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.