Semiconductor device and method of fabricating the same
US6268249A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device and a method of fabricating the same. A semiconductor device having first and second transistor regions and a field region includes a semiconductor substrate having a first type conductivity, a first trench in the substrate at the field region separating the first and second transistor regions from each other, a second trench in the substrate over the first trench, a first field oxide layer in the first trench, a second field oxide layer in the second trench over the first field oxide layer, first and second gate oxide layers on sides of the second trench, first and second gates in the second field oxide layer, and second and third impurity regions at the bottom surface of the second trench and first and fourth impurity regions outside the second trench on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.