Jong-bong Ha
21Patents
5h-index
23Co-inventors
65Inventor score
Filing activity: Aug 6, 1999 → Apr 15, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8569769B2 | E-mode high electron mobility transistors and methods of manufacturing the same | Electricity | 15 | Active |
| US9117890B2 | High-electron mobility transistor and method of manufacturing the same | Electricity | 12 | Active |
| US8860089B2 | High electron mobility transistor and method of manufacturing the same | Electricity | 10 | Active |
| US8785944B2 | High electron mobility transistor | Electricity | 10 | Active |
| US9231093B2 | High electron mobility transistor and method of manufacturing the same | Electricity | 8 | Active |
| US8796737B2 | High electron mobility transistors and methods of manufacturing the same | Electricity | 5 | Active |
| US6268249A | Semiconductor device and method of fabricating the same | Electricity | 4 | Expired |
| US7656089B2 | Tape carrier package on reel and plasma display device using the same | Electricity | 3 | Active |
| US8772834B2 | High electron mobility transistor and method of driving the same | Electricity | 3 | Active |
| US9087704B2 | Semiconductor devices and methods of manufacturing the semiconductor device | Electricity | 2 | Active |
| US9245947B2 | High electron mobility transistors and methods of manufacturing the same | Electricity | 2 | Active |
| US6399986B2 | Semiconductor device and method of fabricating the same | Electricity | 2 | Expired |
| US9147738B2 | High electron mobility transistor including plurality of gate electrodes | Electricity | 2 | Active |
| US8907377B2 | High electron mobility transistor and method of manufacturing the same | Electricity | 1 | Active |
| US8921890B2 | Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor device | Electricity | 1 | Active |
| US9570597B2 | High electron mobility transistor | Electricity | 1 | Active |
| US9461637B2 | Method and apparatus for controlling a gate voltage in high electron mobility transistor | Electricity | 1 | Active |
| US9299800B2 | Methods of manufacturing high electron mobility transistors | Electricity | 0 | Active |
| US9123740B2 | High electron mobility transistors and methods of manufacturing the same | Electricity | 0 | Active |
| US9608100B2 | High electron mobility transistor and method of manufacturing the same | Electricity | 0 | Active |
| US8551821B2 | Enhancement normally off nitride semiconductor device manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.