Method for forming enhanced FOX region of low voltage device in high voltage process
US6268266A · kind A · utility
5Cited by
15References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1999 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Oct 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming enhanced field oxide (FOX) region of low voltage devices in a high voltage process is disclosed. The method includes providing a semiconductor structure comprising a substrate, two field oxide regions on the substrate, a well between the two field oxide regions in the substrate and a silicon nitride layer between the two field oxide regions above the well. As a key step, nitrogen is implanted into the semiconductor structure, and the silicon nitride layer is then removed. Then, a gate oxide layer on the well and silicon oxynitride layer on the field oxide regions are all formed in-situ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.