Method for forming electromigration-resistant structures by doping
US6268291A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1998 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Dec 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a copper conductor in an electronic structure by first depositing a copper composition in a receptacle formed in the electronic structure, and then adding impurities into the copper composition such that its electromigration resistance is improved is disclosed. In the method, the copper composition can be deposited by a variety of techniques such as electroplating, physical vapor deposition and chemical vapor deposition. The impurities which can be implanted include those of C, O, Cl, S and N at a suitable concentration range between about 0.01 ppm by weight and about 1000 ppm by weight. The impurities can be added by three different methods. In the first method, a copper seed layer is first deposited into a receptacle and an ion implantation process is carried out on the seed layer, which is followed by electroplating copper into the receptacle. In the second method, a copper seed layer is first deposited into a receptacle, a copper composition containing impurities is then electrodeposited into the receptacle and the electronic structure is annealed so that impurities diffuse into the copper seed layer. In the third method, a barrier layer is first deposited …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.