Christopher C. Parks
32Patents
10h-index
84Co-inventors
78Inventor score
Filing activity: Apr 29, 1991 → Feb 22, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6268291A | Method for forming electromigration-resistant structures by doping | Electricity | 114 | Expired |
| US6123825A | Electromigration-resistant copper microstructure and process of making | Emerging Cross-Sectional Technologies | 60 | Expired |
| US5998253A | Method of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cell | Electricity | 33 | Expired |
| US5192708A | Sub-layer contact technique using in situ doped amorphous silicon and solid phase recrystallization | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6057220A | Titanium polycide stabilization with a porous barrier | Electricity | 26 | Expired |
| US6589874B2 | Method for forming electromigration-resistant structures by doping | Electricity | 23 | Expired |
| US6890833B2 | Trench isolation employing a doped oxide trench fill | Electricity | 15 | Expired |
| US6358855B1 | Clean method for recessed conductive barriers | Electricity | 14 | Expired |
| US5793075A | Deep trench cell capacitor with inverting counter electrode | Electricity | 14 | Expired |
| US5907777A | Method for forming field effect transistors having different threshold voltages and devices formed thereby | Electricity | 13 | Expired |
| US7276796B1 | Formation of oxidation-resistant seed layer for interconnect applications | Electricity | 8 | Expired |
| US6572982B1 | Electromigration-resistant copper microstructure | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6194736A | Quantum conductive recrystallization barrier layers | Electricity | 8 | Expired |
| US7585765B2 | Formation of oxidation-resistant seed layer for interconnect applications | Electricity | 8 | Active |
| US8969197B2 | Copper interconnect structure and its formation | Electricity | 6 | Active |
| US6265278A | Deep trench cell capacitor with inverting counter electrode | Electricity | 6 | Expired |
| US5374481A | Polyemitter structure with improved interface control | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8415772B2 | Method to prevent surface decomposition of III-V compound semiconductors | Electricity | 3 | Active |
| US6764551B2 | Process for removing dopant ions from a substrate | Performing Operations; Transporting | 2 | Expired |
| US7843067B2 | Method and structure of integrated rhodium contacts with copper interconnects | Emerging Cross-Sectional Technologies | 1 | Active |
| US6797582B2 | Vertical thermal nitride mask (anti-collar) and processing thereof | Electricity | 1 | Expired |
| US6399434B1 | Doped structures containing diffusion barriers | Electricity | 1 | Expired |
| US8431476B2 | Method to prevent surface decomposition of III-V compound semiconductors | Electricity | 1 | Active |
| US7227265B2 | Electroplated copper interconnection structure, process for making and electroplating bath | Chemistry; Metallurgy | 0 | Expired |
| US8563446B2 | Technique to create a buried plate in embedded dynamic random access memory device | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.