Method for producing a semiconductor
US6270685A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Nov 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/084
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the <011> direction of the silicon substrate, and the other side stretches in the <011> direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a nonetched portion corresponding to the main portion of the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.