Patent · US Expired

Method for fabricating a novel metallized oxide structure

US6271076A · kind A · utility

6Cited by
3References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 9, 1999
Grant dateAug 7, 2001
Priority date
Expiry dateApr 9, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01G4/008
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A structure and method for providing an interface with an oxide surface which exhibits both high adhesion and preferred electrical properties. The method involves providing a partial layer of a first material, chosen for its electrical properties, whereby the partial layer has openings through which areas of the oxide surface are exposed. Provision of the partial layer is followed by deposition of a continuous layer of a second material, selected for its preferred physical interface properties, i.e., adhesion. The continuous layer of the second material is deposited over the partial layer including the exposed areas of the oxide surface. The second material will adhere to the exposed areas of oxide, while the first material will provide a discrete interface with the oxide. An embodiment includes a capacitor structure having one or two electrodes abutting a high dielectric thin film, whereby the electrodes comprise first partial layers of metal having favorable electrical properties and second continuous layers adjacent the first partial layers, with the second layer material having been chosen for its physical properties, and wherein the second material adheres to exposed areas of …

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.