Thomas M. Shaw
88Patents
18h-index
152Co-inventors
87Inventor score
Filing activity: Mar 20, 1991 → Sep 13, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6090659A | Lead silicate based capacitor structures | Electricity | 374 | Expired |
| US7955955B2 | Using crack arrestor for inhibiting damage from dicing and chip packaging interaction failures in back end of line structures | Electricity | 108 | Active |
| US5283104A | Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates | Emerging Cross-Sectional Technologies | 53 | Expired |
| US6417572B1 | Process for producing metal interconnections and product produced thereby | Electricity | 53 | Expired |
| US6202191A | Electromigration resistant power distribution network | Electricity | 48 | Expired |
| US6088216A | Lead silicate based capacitor structures | Electricity | 41 | Expired |
| US7381659B2 | Method for reducing film stress for SiCOH low-k dielectric materials | Electricity | 40 | Active |
| US7098676B2 | Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitor | Electricity | 38 | Expired |
| US7067902B2 | Building metal pillars in a chip for structure support | Electricity | 31 | Expired |
| US6255122A | Amorphous dielectric capacitors on silicon | Electricity | 31 | Expired |
| US5337475A | Process for producing ceramic circuit structures having conductive vias | Emerging Cross-Sectional Technologies | 25 | Expired |
| US7402532B2 | Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer | Electricity | 24 | Active |
| US7109093B2 | Crackstop with release layer for crack control in semiconductors | Electricity | 20 | Expired |
| US8242600B2 | Redundant metal barrier structure for interconnect applications | Electricity | 19 | Active |
| US8076756B2 | Structure for inhibiting back end of line damage from dicing and chip packaging interaction failures | Electricity | 19 | Active |
| US7405147B2 | Device and methodology for reducing effective dielectric constant in semiconductor devices | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7973409B2 | Hybrid interconnect structure for performance improvement and reliability enhancement | Electricity | 18 | Active |
| US6972209B2 | Stacked via-stud with improved reliability in copper metallurgy | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6388285B1 | Feram cell with internal oxygen source and method of oxygen release | Electricity | 16 | Expired |
| US6333202A | Flip FERAM cell and method to form same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5926360A | Metallized oxide structure and fabrication | Electricity | 13 | Expired |
| US9586857B2 | Controlling fragmentation of chemically strengthened glass | Chemistry; Metallurgy | 13 | Active |
| US7102232B2 | Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer | Electricity | 11 | Expired |
| US8129286B2 | Reducing effective dielectric constant in semiconductor devices | Emerging Cross-Sectional Technologies | 8 | Active |
| US7456098B2 | Building metal pillars in a chip for structure support | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.