Simplifying conductive plate/via isolation
US6271078A · kind A · utility
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11Claims
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Assignee
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Key dates
| Filing date | Jun 3, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Jun 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etch using CFx in an O2-rich environment will clean the contact/via at the same time it retracts a layer of TiN enclosed in the dielectric layer, such as the plate layer in a Capacitor-Under-Bitline DRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.