Method for preventing the cluster defect of HSG
US6271086A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method for preventing the cluster defect of HSG is disclosed. Where the cluster defect means that when wafer with HSGs are cleaned just when HSGs are formed, there are a plurality of clusters appear on HSGs. In comparison with conventional fabrication that wafer and HSGs are directly cleaned just when these HSGs are formed. The idea behind the invention is that when HSGs are formed, a heat treatment is applied to change surface states of HSGs before wafer and HSGs are cleaned. Owing to the fact that these surface states of HSGs are improved by the heat treatment, no cluster will be formed during following clean process. Thus, the formation of cluster is obviously protected and then quality of any application of HSGs is improved by the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.