Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US6271121A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76876
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for chemical vapor deposition of blanket tungsten thin films on titanium nitride proceeds by hydrogen reduction of tungsten hexafluoride at temperatures between 200.degree. C. and 500.degree. C. Tungsten film nucleation is preferably facilitated by a hydrogen plasma treatment of the titanium nitride surface of the substrate. The plasma treatment may be carried out in a separate etch chamber and transferred to a tungsten CVD chamber without intervening exposure to air, or, preferably, is carried out with a low energy etch performed with the substrate mounted on a susceptor in the chamber of the tungsten CVD reactor at which the tungsten film is to be applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.