Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics
US6271144A · kind A · utility
18Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1998 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Jun 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process for etching a polycrystalline Si.sub.1-x Ge.sub.x layer or a stack includes a polycrystalline Si.sub.1-x Ge.sub.x layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl.sub.2) and of either nitrogen (N.sub.2) or ammonia (NH.sub.3) or of a nitrogen/ammonia mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.