Bit line sense-amplifier for a semiconductor memory device and a method for driving the same
US6272059A · kind A · utility
5Cited by
10References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 21, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Dec 21, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A bit line sense-amplifier for a semiconductor memory device and a method for driving the same do not apply a bit line precharge voltage by a switch in an equalization operation, perform an equalization operation by interconnecting a plurality of sense-amplifier lines, then perform a precharge operation by applying a bit line precharge voltage through NMOS transistor of the switch, increase a sensing speed by reducing a loading of a sense-amplifier, reduce a transient current, and minimize a power-consumption by performing a precharge operation after a bit line equalization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.