Douk-Hyoun Ryu
15Patents
5h-index
17Co-inventors
63Inventor score
Filing activity: Jul 1, 1996 → Aug 17, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9576652B1 | Resistive random access memory apparatus with forward and reverse reading modes | Physics | 8 | Active |
| US6272059A | Bit line sense-amplifier for a semiconductor memory device and a method for driving the same | Physics | 5 | Expired |
| US9424914B2 | Resistive memory apparatus and memory cell thereof | Physics | 5 | Active |
| US8279686B2 | Memory circuits, systems, and methods for providing bit line equalization voltages | Physics | 5 | Active |
| US9269428B2 | RRAM memory device and method thereof | Electricity | 5 | Active |
| US10700878B1 | Physical unclonable function code generation apparatus and method thereof | Physics | 4 | Active |
| US5712821A | Redundancy circuit of semiconductor memory device | Physics | 4 | Expired |
| US5946225A | SRAM device having negative voltage generator for performing stable data latch operation | Physics | 3 | Expired |
| US11114180B1 | Non-volatile memory device | Physics | 3 | Active |
| US10811092B1 | RRAM with plurality of 1TnR structures | Physics | 3 | Active |
| US9153316B1 | Circuits and read methods of RRAM | Physics | 3 | Active |
| US10930346B1 | Resistive memory with self-termination control function and self-termination control method | Physics | 2 | Active |
| US9859000B1 | Apparatus for providing adjustable reference voltage for sensing read-out data for memory | Physics | 2 | Active |
| US10790007B1 | Memory device and method for assiting read operation | Electricity | 1 | Active |
| US10262732B2 | Programmable array logic circuit and operating method thereof | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.