Method for depositing layers of high quality semiconductor material
US6274461A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Aug 19, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.