Method of fabricating a semiconductor device
US6274466A · kind A · utility
1Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Jun 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device to increase the effective concentration of a doped region. A first dopant is implanted into a substrate. A second dopant is implanted into the substrate. The first dopant has a lower diffusion coefficient, a higher energy gap, and a higher atomic mass than those of the second dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.