Method for producing a group III nitride compound semiconductor substrate
US6274518A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2000 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Apr 10, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.