Compound semiconductor device and method of manufacturing the same
US6274893A · kind A · utility
27Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Jun 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
Abstract
The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1.times.10.sup.16 to 1.times.10.sup.17 atoms/cm.sup.3, or the bandgap of a Schottky layer is set wider than that of the electron supply layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.