Semiconductor device and method for making the same
US6274923A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 9, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Jun 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having: a first interconnect or electrode formed on a substrate; an organic insulation film which is formed covering the first interconnect or electrode and in which an interconnect trench and an interlayer connection hole reaching from the interconnect trench to the first interconnect or electrode are formed; an inorganic insulation film which is formed covering the side of the interconnect trench and the interlayer connection hole, and into at least surface part of which nitrogen is introduced; a second interconnect or electrode buried into the interconnect trench through the inorganic insulation film; and a buried conductive layer which is formed in the interlayer connection hole and connects between the between the first interconnect or electrode and the second interconnect or electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.