IGBT gate drive circuit with short circuit protection
US6275093A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1998 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Feb 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0828
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An IGBT gate driver circuit includes means for detecting when the collector-to-emitter voltage (Vce) of a turned-on IGBT, intended to be operated in the saturation region, increases above a preset level, indicative of a fault condition, such as a short circuit. In response to such an increase in the Vce of a turned on IGBT, the IGBT is turned-off in two steps. First, the turn-on gate drive is decreased to a level that is still above the threshold (turn-on) voltage of the IGBT in order to decrease the current flowing through the IGBT and hence, the peak power dissipation. This decrease in the current through the IGBT and the peak power dissipation increases the length of time the IGBT can withstand a fault condition such as a short circuit. Then, after decreasing the gate drive to the IGBT, the gate drive is gradually decreased until the IGBT is completely turned off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.