Inventor · Santa Clara, CA, US

Anup Bhalla

301Patents
22h-index
88Co-inventors
93Inventor score

Filing activity: Sep 5, 1996 → Jun 13, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8119482B2 MOSFET using gate work function engineering for switching applications Electricity 123 Active
US6285060A Barrier accumulation-mode MOSFET Electricity 122 Expired
US6392290B1 Vertical structure for semiconductor wafer-level chip scale packages Electricity 89 Expired
US6838722B2 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 65 Expired
US8299494B2 Nanotube semiconductor devices Electricity 60 Active
US9083343B1 Cascode switching circuit Electricity 52 Active
US7005347B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 46 Expired
US7910486B2 Method for forming nanotube semiconductor devices Electricity 37 Active
US7453119B2 Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact Electricity 37 Active
US7335946B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 33 Expired
US7285822B2 Power MOS device Electricity 32 Expired
US8575695B2 Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode Electricity 31 Active
US8431470B2 Approach to integrate Schottky in MOSFET Electricity 28 Active
US8110869B2 Planar SRFET using no additional masks and layout method Electricity 28 Active
US6275093A IGBT gate drive circuit with short circuit protection Electricity 27 Expired
US8338854B2 TVS with low capacitance and forward voltage drop with depleted SCR as steering diode Electricity 27 Active
US6080614A Method of making a MOS-gated semiconductor device with a single diffusion Emerging Cross-Sectional Technologies 27 Expired
US7208818B2 Power semiconductor package Electricity 27 Expired
US8698196B2 Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage Electricity 24 Active
US6437419B1 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Electricity 24 Expired
US7436022B2 Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout Electricity 23 Active
US7605425B2 Power MOS device Electricity 22 Active
US7745878B2 Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact Electricity 22 Active
US8431989B2 Shielded gate trench (SGT) MOSFET devices and manufacturing processes Electricity 22 Active
US8680613B2 Termination design for high voltage device Electricity 21 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.