Ferroelectric voltage boost circuits
US6275425A · kind A · utility
13Cited by
7References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 16, 2000 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Nov 16, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A boost circuit for a ferroelectric memory operated in a low voltage supply environment is achieved by floating a local supply voltage and using a single boost via one or more appropriately sized ferroelectric boost capacitors to elevate the local supply level to the desired boosted voltage. When boosting is not required, the local supply voltage is tied to the system external power supply through an appropriately sized PMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.